| Dimension Tolerance | (W±0.1mm)x(H±0.1mm)x(L+0.5/-0.1mm) (L≥2.5mm) (W±0.1mm)x(H±0.1mm)x(L+0.2/-0.1mm) (L<2.5mm) |
| Flatness | < λ/8 @ 633nm (L≥2.5mm); < λ/4 @ 633nm (L<2.5mm) |
| Transmitting wavefront distortion: | < λ/4 @ 633nm |
| Scratch&Dig | 10/5 Scratch/dig |
| Parallism | ≤20" |
| Perpendicularity | ≤5' |
| Chip: | ≤0.1mm |
| Clear Aperture | ≥Centre Diameter 90% |
| Angle tolerance: | ≤0.5° |
| Damage threshold[GW/cm2 ]: | >1 for 1064nm, TEM00, 10ns, 10Hz (AR-coated) |
| coating | Both ends AR/AR-1064/808nm, R<0.2%@1064nm,R<2%@808nm • S1:HR@1064&532 nm,HT808 nm, R>99.8%@1064&532nm,T>90%@808nm S2:AR@1064&532 nm, R<0.2%@1064nm,R<0.5%@532nm • S1:HR@1064,HT808, R>99.8%@1064nm,T>95%@808nm S2:AR@1064, R<0.1%@1064nm. • S1,S2 AR-coated, S3:gold/chrome plated. • Both ends AR/AR-1064 nm; S3:AR-808 nm • Other coatings are available upon request |
| Atomic Density | 1.26x1020 atoms/cm3 (Nd1.0%) |
| Crystal Structure | Zircon Tetragonal, space group D4h-I4/amd |
| Cell Parameter | a=b=7.1193Å,c=6.2892Å |
| Density | 4.22g/cm3 |
| Mohs Hardness | 4-5 (Glass-like) |
| Thermal Expansion Coefficient（300K） | αa=4.43x10-6/K |
| αc=11.37x10-6/K | |
| Thermal Conductivity Coefficient（300K） | ∥C：0.0523W/cm/K |
| ⊥C：0.0510W/cm/K | |
| Lasing wavelength | 1064nm，1342nm |
| Thermal optical coefficient（300K） | dno/dT=8.5×10-6/K |
| dne/dT=2.9×10-6/K | |
| Stimulated emission cross-section | 25×10-19cm2 @ 1064nm |
| Fluorescent lifetime | 90μs(1%) |
| Absorption coefficient | 31.4cm-1 @810nm |
| Intrinsic loss | 0.02cm-1 @1064nm |
| Gain bandwidth | 0.96nm@1064nm |
| Polarized laser emission | polarization; parallel to optical axis (c-axis) |
| Diode pumped optical to optical efficiency | >60% |
| Sellmeier equations（λ in μm） | no2=3.77834+0.069736/(λ2-0.04724)-0.010813λ2 |
| ne2=4.59905+0.110534/(λ2-0.04813)-0.012676λ2 |
