TGG晶体


TGG晶体(Terbium Gallium Garnet, Tb3Ga5O12,)是一种优异的磁光晶体,用于400 nm-1100 nm范围内的各种法拉第器件(旋转器和隔离器),不包括475 nm-500 nm。



Dimension Tolerance       (W±0.1mm)x(H±0.1mm)x(L+0.5/-0.1mm) (L≥2.5mm)
(W±0.1mm)x(H±0.1mm)x(L+0.2/-0.1mm) (L<2.5mm)
Flatness< λ/8 @ 633nm (L≥2.5mm); < λ/4 @ 633nm (L<2.5mm)
Transmitting wavefront distortion:< λ/4 @ 633nm
Scratch&Dig10/5 Scratch/dig
Parallism≤20" 
Perpendicularity≤5' 
Chip: ≤0.1mm
Clear Aperture≥Centre Diameter 90%
Angle tolerance:≤0.5°
Damage threshold[GW/cm2 ]:>1 for 1064nm, TEM00, 10ns, 10Hz (AR-coated)
coatingBoth ends AR/AR-1064/808nm, R<0.2%@1064nm,R<2%@808nm
• S1:HR@1064&532 nm,HT808 nm,    R>99.8%@1064&532nm,T>90%@808nm
  S2:AR@1064&532 nm, R<0.2%@1064nm,R<0.5%@532nm
• S1:HR@1064,HT808, R>99.8%@1064nm,T>95%@808nm
  S2:AR@1064, R<0.1%@1064nm.
• S1,S2 AR-coated, S3:gold/chrome plated.
• Both ends AR/AR-1064 nm; S3:AR-808 nm
• Other coatings are available upon request
PropertyValue
Chemical FormulaTb3Ga5O12
Lattice Parametera=12.355Å
Growth MethodCzocralski
Density7.13g/cm3
Mohs Hardness8
Melting Point1725
Refractive Index1.954 at 1064nm
Crystal Structure[111]
Extinction Ratio (over 2/3 clear aperture)30 dB
Thermal Conductivity7.4 W cm^-1 K^-1
Nonlinear Index, n28
Figure of Merit, V/a27
Figure of Merit, V/n25






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