Silicon Oxide Wafers

Silicon Oxide Wafers

---

The thermal oxide layer of a silicon wafer is an oxide layer or silicon dioxide layer formed on the bare surface of a silicon wafer under high temperature conditions in the presence of an oxidant. The thermal oxide layer of a silicon wafer is usually grown in a horizontal tube furnace. The growth temperature range is generally 900°C~1200°C. There are two growth methods: "wet oxidation" and "dry oxidation". The thermal oxide layer is a "grown" oxide layer. Compared with the oxide layer deposited by CVD, it has higher uniformity and higher dielectric strength. The thermal oxide layer is an excellent dielectric layer as an insulator. In many silicon-based devices, the thermal oxide layer plays an important role as a doping barrier layer and a surface dielectric.

Inquiry Now